CONTACT VIA STRUCTURE AND FABRICATING METHOD THERE

专利名称：CONTACT VIA STRUCTURE AND

FABRICATING METHOD THEREOF

发明人：LIU, Jiquan申请号：EP16194579.5申请日：20161019公开号：EP3163605A2公开日：20170503

专利附图：

摘要：In some embodiments, a contact via and a fabricating method thereof areprovided. The method can comprise: providing a substrate; forming a buffer layer (12) inthe substrate; forming a dielectric layer (13) covering the substrate and the buffer layer;

forming a through hole (14) in the dielectric layer, wherein a bottom of the through holeexposes a surface of the buffer layer; performing a roughening treatment to the exposedsurface of the buffer layer to increase a roughness of the exposed surface of the bufferlayer; forming a barrier layer in the through hole, and reducing a thickness of a portion ofthe barrier layer at the bottom of the through hole; and filling a conductive material intothe through hole to form a contact via.

申请人：Semiconductor Manufacturing International Corporation(Shanghai),Semiconductor Manufacturing International Corporation (Beijing)

地址：No. 18, Zhangjiang Road Pudong New Area Shanghai 201203 CN,No. 18,Wenchang Road Economic and Technological Development Area, Daxing Area Beijing1000176 CN

国籍：CN,CN

代理机构：Klunker IP Patentanwälte PartG mbB

更多信息请下载全文后查看