Method For Forming Interconnect Structure

专利名称：Method For Forming Interconnect Structure发明人：Hsuan-Han Lin,Jhu-Ming Song,Mu-Yi

Lin,Kuang-Hsin Chen,Bor-Zen Tien,Tzong-Sheng Chang

申请号：US13791076申请日：20130308

公开号：US20140252621A1公开日：20140911

专利附图：

摘要：A method for forming interconnect structures comprises forming a metal linemade of a first conductive material over a substrate, depositing a dielectric layer over the

metal line, patterning the dielectric layer to form an opening, depositing a first barrierlayer on a bottom and sidewalls of the opening using an atomic layer depositiontechnique, depositing a second barrier layer over the first barrier layer, wherein the firstbarrier layer is coupled to ground and forming a pad made of a second conductivematerial in the opening.

申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

地址：Hsin-Chu TW

国籍：TW

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